@article{d92001f841f94523b7623ad461667301,
title = "Deep traps in AlGaN/GaN heterostructure field-effect transistors studied by current-mode deep-level transient spectroscopy: Influence of device location",
keywords = "AlGaN/GaN HFETs, current deep-level transient spectroscopy (I-DLTS), deep-level traps, spatial variation",
author = "Fang, {Z. Q.} and B. Claflin and Look, {D. C.}",
year = "2011",
month = dec,
doi = "10.1007/s11664-011-1787-6",
language = "English",
volume = "40",
pages = "2337--2343",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
number = "12",
}