Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Z. Q. Fang; B. Claflin; D. C. Look; D. S. Green; R. Vetury

doi:10.1063/1.3488610

Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

Z. Q. Fang, B. Claflin, D. C. Look, D. S. Green, R. Vetury

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	063706
Journal	Journal of Applied Physics
Volume	108
Issue number	6
DOIs	https://doi.org/10.1063/1.3488610
State	Published - Sep 15 2010

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.3488610

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title = "Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers",

author = "Fang, \{Z. Q.\} and B. Claflin and Look, \{D. C.\} and Green, \{D. S.\} and R. Vetury",

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T2 - Effect of carbon concentration in GaN buffer layers

AU - Fang, Z. Q.

AU - Claflin, B.

AU - Look, D. C.

AU - Green, D. S.

AU - Vetury, R.

PY - 2010/9/15

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VL - 108

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

ASJC Scopus Subject Areas

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