Deep traps in AlGaN/GaN heterostructures studied by deep level transient spectroscopy: Effect of carbon concentration in GaN buffer layers

  • Z. Q. Fang
  • , B. Claflin
  • , D. C. Look
  • , D. S. Green
  • , R. Vetury

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number063706
JournalJournal of Applied Physics
Volume108
Issue number6
DOIs
StatePublished - Sep 15 2010

ASJC Scopus Subject Areas

  • General Physics and Astronomy

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