Deep traps in high-purity semi-insulating 6H-SiC substrates: Thermally stimulated current spectroscopy

Z. Q. Fang, B. Claflin, D. C. Look, L. Polenta, J. Chen, T. Anderson, W. C. Mitchel

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials 2005, - Proceedings of the International Conference on Silicon Carbide and Related Materials 2005
PublisherTrans Tech Publications Ltd
Pages509-512
Number of pages4
EditionPART 1
ISBN (Print)9780878494255
DOIs
StatePublished - 2006
EventInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005) - Pittsburgh, PA, United States
Duration: Sep 18 2005Sep 23 2005

Publication series

NameMaterials Science Forum
NumberPART 1
Volume527-529
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

ConferenceInternational Conference on Silicon Carbide and Related Materials 2005, (ICSCRM 2005)
Country/TerritoryUnited States
CityPittsburgh, PA
Period9/18/059/23/05

ASJC Scopus Subject Areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Keywords

  • Deep traps
  • High-purity semi-insulating SiC
  • Thermally stimulated current spectroscopy

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