Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

D. C. Look; Z. Q. Fang; H. Yamamoto; J. R. Sizelove; M. G. Mier; C. E. Stutz

doi:10.1063/1.357846

Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

D. C. Look, Z. Q. Fang, H. Yamamoto, J. R. Sizelove, M. G. Mier, C. E. Stutz

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1029-1032
Number of pages	4
Journal	Journal of Applied Physics
Volume	76
Issue number	2
DOIs	https://doi.org/10.1063/1.357846
State	Published - 1994

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.357846

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title = "Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures",

author = "Look, \{D. C.\} and Fang, \{Z. Q.\} and H. Yamamoto and Sizelove, \{J. R.\} and Mier, \{M. G.\} and Stutz, \{C. E.\}",

year = "1994",

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journal = "Journal of Applied Physics",

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AU - Look, D. C.

AU - Fang, Z. Q.

AU - Yamamoto, H.

AU - Sizelove, J. R.

AU - Mier, M. G.

AU - Stutz, C. E.

PY - 1994

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VL - 76

SP - 1029

EP - 1032

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

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Deep traps in molecular-beam-epitaxial GaAs grown at low temperatures

ASJC Scopus Subject Areas

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