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Defect nature of the 0.4-eV center in O-doped GaAs

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)829-831
Number of pages3
JournalApplied Physics Letters
Volume42
Issue number9
DOIs
StatePublished - 1983

ASJC Scopus Subject Areas

  • Physics and Astronomy (miscellaneous)

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