Defect studies in electron-irradiated ZnO and GaN

F. Tuomisto; D. C. Look; G. C. Farlow

doi:10.1016/j.physb.2007.09.032

Defect studies in electron-irradiated ZnO and GaN

F. Tuomisto, D. C. Look, G. C. Farlow

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	604-608
Number of pages	5
Journal	Physica B: Condensed Matter
Volume	401-402
DOIs	https://doi.org/10.1016/j.physb.2007.09.032
State	Published - Dec 15 2007

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

Keywords

GaN
Positron annihilation
Vacancy defects
ZnO

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10.1016/j.physb.2007.09.032

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title = "Defect studies in electron-irradiated ZnO and GaN",

keywords = "GaN, Positron annihilation, Vacancy defects, ZnO",

author = "F. Tuomisto and Look, {D. C.} and Farlow, {G. C.}",

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journal = "Physica B: Condensed Matter",

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T1 - Defect studies in electron-irradiated ZnO and GaN

AU - Tuomisto, F.

AU - Look, D. C.

AU - Farlow, G. C.

PY - 2007/12/15

Y1 - 2007/12/15

KW - GaN

KW - Positron annihilation

KW - Vacancy defects

KW - ZnO

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M3 - Article

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JO - Physica B: Condensed Matter

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Defect studies in electron-irradiated ZnO and GaN

ASJC Scopus Subject Areas

Keywords

Access to Document

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