Demonstration of semiconductor characterization by phonon sidebands in photoluminescence

D. C. Reynolds; D. C. Look; D. N. Talwar; G. L. McCoy; K. R. Evans

doi:10.1103/PhysRevB.51.2572

Demonstration of semiconductor characterization by phonon sidebands in photoluminescence

D. C. Reynolds, D. C. Look, D. N. Talwar, G. L. McCoy, K. R. Evans

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2572-2575
Number of pages	4
Journal	Physical Review B
Volume	51
Issue number	4
DOIs	https://doi.org/10.1103/PhysRevB.51.2572
State	Published - 1995

ASJC Scopus Subject Areas

Condensed Matter Physics

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10.1103/PhysRevB.51.2572

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title = "Demonstration of semiconductor characterization by phonon sidebands in photoluminescence",

author = "Reynolds, {D. C.} and Look, {D. C.} and Talwar, {D. N.} and McCoy, {G. L.} and Evans, {K. R.}",

year = "1995",

doi = "10.1103/PhysRevB.51.2572",

language = "English",

volume = "51",

pages = "2572--2575",

journal = "Physical Review B",

issn = "0163-1829",

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T1 - Demonstration of semiconductor characterization by phonon sidebands in photoluminescence

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Talwar, D. N.

AU - McCoy, G. L.

AU - Evans, K. R.

PY - 1995

Y1 - 1995

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DO - 10.1103/PhysRevB.51.2572

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SP - 2572

EP - 2575

JO - Physical Review B

JF - Physical Review B

IS - 4

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Demonstration of semiconductor characterization by phonon sidebands in photoluminescence

ASJC Scopus Subject Areas

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