Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

X. L. Sun; S. H. Goss; L. J. Brillson; D. C. Look; R. J. Molnar

doi:10.1063/1.1454187

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

X. L. Sun, S. H. Goss, L. J. Brillson, D. C. Look, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	6729-6738
Number of pages	10
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1454187
State	Published - May 15 2002

ASJC Scopus Subject Areas

General Physics and Astronomy

Access to Document

10.1063/1.1454187

Cite this

@article{11898389b34440a0beb6295bac2277a0,

title = "Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy",

author = "Sun, {X. L.} and Goss, {S. H.} and Brillson, {L. J.} and Look, {D. C.} and Molnar, {R. J.}",

year = "2002",

month = may,

day = "15",

doi = "10.1063/1.1454187",

language = "English",

volume = "91",

pages = "6729--6738",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "10 I",

}

TY - JOUR

T1 - Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

AU - Sun, X. L.

AU - Goss, S. H.

AU - Brillson, L. J.

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2002/5/15

Y1 - 2002/5/15

UR - http://www.scopus.com/inward/record.url?scp=0037094620&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037094620&partnerID=8YFLogxK

U2 - 10.1063/1.1454187

DO - 10.1063/1.1454187

M3 - Article

AN - SCOPUS:0037094620

SN - 0021-8979

VL - 91

SP - 6729

EP - 6738

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 I

ER -

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this