Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

  • X. L. Sun
  • , S. H. Goss
  • , L. J. Brillson
  • , D. C. Look
  • , R. J. Molnar

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)6729-6738
Number of pages10
JournalJournal of Applied Physics
Volume91
Issue number10 I
DOIs
StatePublished - May 15 2002

ASJC Scopus Subject Areas

  • General Physics and Astronomy

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