Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

X. L. Sun; S. H. Goss; L. J. Brillson; D. C. Look; R. J. Molnar

doi:10.1063/1.1454187

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

X. L. Sun, S. H. Goss, L. J. Brillson, D. C. Look, R. J. Molnar

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	6729-6738
Number of pages	10
Journal	Journal of Applied Physics
Volume	91
Issue number	10 I
DOIs	https://doi.org/10.1063/1.1454187
State	Published - May 15 2002

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.1454187

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title = "Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy",

author = "Sun, \{X. L.\} and Goss, \{S. H.\} and Brillson, \{L. J.\} and Look, \{D. C.\} and Molnar, \{R. J.\}",

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doi = "10.1063/1.1454187",

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T1 - Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

AU - Sun, X. L.

AU - Goss, S. H.

AU - Brillson, L. J.

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2002/5/15

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M3 - Article

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VL - 91

SP - 6729

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 I

ER -

Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

ASJC Scopus Subject Areas

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