Depth measurement of doped semiconductors using the Hall technique

Gregory C. DeSalvo; David C. Look; Christopher A. Bozada; John L. Ebel

doi:10.1063/1.363846

Depth measurement of doped semiconductors using the Hall technique

Gregory C. DeSalvo, David C. Look, Christopher A. Bozada, John L. Ebel

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	281-284
Number of pages	4
Journal	Journal of Applied Physics
Volume	81
Issue number	1
DOIs	https://doi.org/10.1063/1.363846
State	Published - Jan 1 1997

ASJC Scopus Subject Areas

General Physics and Astronomy

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title = "Depth measurement of doped semiconductors using the Hall technique",

author = "DeSalvo, {Gregory C.} and Look, {David C.} and Bozada, {Christopher A.} and Ebel, {John L.}",

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pages = "281--284",

journal = "Journal of Applied Physics",

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AU - DeSalvo, Gregory C.

AU - Look, David C.

AU - Bozada, Christopher A.

AU - Ebel, John L.

PY - 1997/1/1

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SP - 281

EP - 284

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

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Depth measurement of doped semiconductors using the Hall technique

ASJC Scopus Subject Areas

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