Determination of Shallow Minority-Acceptor Concentration in Multiply Doped Silicon

Gust Bambakidis; G. J. Brown

doi:10.1063/1.342683

Determination of Shallow Minority-Acceptor Concentration in Multiply Doped Silicon

Gust Bambakidis, G. J. Brown

Wright State University

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Abstract

A method is presented, based on photothermal ionization spectroscopy (PTIS), for determining the shallow minority&hyphen;acceptor concentration in multiply doped silicon, over the concentration range 10 1 3 /cm 3 –10 1 5 /cm 3 . The method is an extension of a model developed previously for the PTIS response in a multiply doped semiconductor, which accounts for the experimentally observed change in signature, from negative to positive, of the lower&hyphen;energy lines of the deeper acceptor as the temperature is increased. It uses a calculated curve of the dependence on the shallow&hyphen;acceptor concentration of the temperature at which the change in signature occurs, for a given line, and compares it to a determination of this temperature from actual spectra for the sample. The method is applied to the determination of boron concentration in the Si(Ga,B) system.

Original language	American English
Journal	Journal of Applied Physics
Volume	65
DOIs	https://doi.org/10.1063/1.342683
State	Published - Apr 1 1989

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Physical Sciences and Mathematics
Physics

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title = "Determination of Shallow Minority-Acceptor Concentration in Multiply Doped Silicon",

abstract = " A method is presented, based on photothermal ionization spectroscopy (PTIS), for determining the shallow minority&hyphen;acceptor concentration in multiply doped silicon, over the concentration range 10 1 3 /cm 3 –10 1 5 /cm 3 . The method is an extension of a model developed previously for the PTIS response in a multiply doped semiconductor, which accounts for the experimentally observed change in signature, from negative to positive, of the lower&hyphen;energy lines of the deeper acceptor as the temperature is increased. It uses a calculated curve of the dependence on the shallow&hyphen;acceptor concentration of the temperature at which the change in signature occurs, for a given line, and compares it to a determination of this temperature from actual spectra for the sample. The method is applied to the determination of boron concentration in the Si(Ga,B) system.",

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N2 - A method is presented, based on photothermal ionization spectroscopy (PTIS), for determining the shallow minority&hyphen;acceptor concentration in multiply doped silicon, over the concentration range 10 1 3 /cm 3 –10 1 5 /cm 3 . The method is an extension of a model developed previously for the PTIS response in a multiply doped semiconductor, which accounts for the experimentally observed change in signature, from negative to positive, of the lower&hyphen;energy lines of the deeper acceptor as the temperature is increased. It uses a calculated curve of the dependence on the shallow&hyphen;acceptor concentration of the temperature at which the change in signature occurs, for a given line, and compares it to a determination of this temperature from actual spectra for the sample. The method is applied to the determination of boron concentration in the Si(Ga,B) system.

AB - A method is presented, based on photothermal ionization spectroscopy (PTIS), for determining the shallow minority&hyphen;acceptor concentration in multiply doped silicon, over the concentration range 10 1 3 /cm 3 –10 1 5 /cm 3 . The method is an extension of a model developed previously for the PTIS response in a multiply doped semiconductor, which accounts for the experimentally observed change in signature, from negative to positive, of the lower&hyphen;energy lines of the deeper acceptor as the temperature is increased. It uses a calculated curve of the dependence on the shallow&hyphen;acceptor concentration of the temperature at which the change in signature occurs, for a given line, and compares it to a determination of this temperature from actual spectra for the sample. The method is applied to the determination of boron concentration in the Si(Ga,B) system.

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DO - 10.1063/1.342683

M3 - Article

VL - 65

JO - Journal of Applied Physics

JF - Journal of Applied Physics

ER -

Determination of Shallow Minority-Acceptor Concentration in Multiply Doped Silicon

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