Determination of surface roughness of InP (001) wafers by x‐ray scattering

S. F. Cui, J. H. Li, M. Li, C. R. Li, Y. S. Gu, Z. H. Mai, Y. T. Wang, Yan Zhuang

Research output: Contribution to journalArticlepeer-review

Abstract

The surface roughness of polished InP (001) wafers were examined by x‐ray reflectivity and crystal truncation rod (CTR) measurements. The root‐mean‐square roughness and the lateral correlation scale were obtained by both methods. The scattering intensities in the scans transverse to the specular reflection rod were found to contain two components. A simple surface model of surface faceting is proposed to explain the experimental data. The sensitivities of the two methods to the surface structure and the role of the resolution functions in the CTR measurements are discussed.
Original languageAmerican English
Pages (from-to)4154–4158
JournalJournal of Applied Physics
Volume76
Issue number7
DOIs
StatePublished - Oct 1 1994
Externally publishedYes

Keywords

  • X-ray diffraction

Disciplines

  • Electrical and Computer Engineering

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