Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

S. Hautakangas; I. Makkonen; V. Ranki; M. J. Puska; K. Saarinen; X. Xu; D. C. Look

doi:10.1103/PhysRevB.73.193301

Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

S. Hautakangas, I. Makkonen, V. Ranki, M. J. Puska, K. Saarinen, X. Xu, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	193301
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	73
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.73.193301
State	Published - 2006

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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10.1103/PhysRevB.73.193301

Cite this

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title = "Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy",

author = "S. Hautakangas and I. Makkonen and V. Ranki and Puska, {M. J.} and K. Saarinen and X. Xu and Look, {D. C.}",

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language = "English",

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journal = "Physical Review B - Condensed Matter and Materials Physics",

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AU - Hautakangas, S.

AU - Makkonen, I.

AU - Ranki, V.

AU - Puska, M. J.

AU - Saarinen, K.

AU - Xu, X.

AU - Look, D. C.

PY - 2006

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M3 - Article

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SN - 1098-0121

VL - 73

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

IS - 19

M1 - 193301

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Direct evidence of impurity decoration of Ga vacancies in GaN from positron annihilation spectroscopy

ASJC Scopus Subject Areas

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