Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

G. M. Foster; G. Faber; Y. F. Yao; C. C. Yang; E. R. Heller; D. C. Look; L. J. Brillson

doi:10.1063/1.4963888

Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

G. M. Foster, G. Faber, Y. F. Yao, C. C. Yang, E. R. Heller, D. C. Look, L. J. Brillson

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	143506
Journal	Applied Physics Letters
Volume	109
Issue number	14
DOIs	https://doi.org/10.1063/1.4963888
State	Published - Oct 3 2016

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.4963888

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title = "Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions",

author = "Foster, \{G. M.\} and G. Faber and Yao, \{Y. F.\} and Yang, \{C. C.\} and Heller, \{E. R.\} and Look, \{D. C.\} and Brillson, \{L. J.\}",

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doi = "10.1063/1.4963888",

language = "English",

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T1 - Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

AU - Foster, G. M.

AU - Faber, G.

AU - Yao, Y. F.

AU - Yang, C. C.

AU - Heller, E. R.

AU - Look, D. C.

AU - Brillson, L. J.

PY - 2016/10/3

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VL - 109

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 143506

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Direct measurement of defect and dopant abruptness at high electron mobility ZnO homojunctions

ASJC Scopus Subject Areas

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