Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy

S. H. Goss, A. P. Young, L. J. Brillson, D. C. Look, R. J. Molnar

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	G3.59.1-G3.59.6
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Externally published	Yes
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

ASJC Scopus Subject Areas

@article{e3379c0a4f5a4a2dbc4f726fd90f1111,

title = "Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy",

author = "Goss, {S. H.} and Young, {A. P.} and Brillson, {L. J.} and Look, {D. C.} and Molnar, {R. J.}",

year = "2001",

language = "English",

volume = "639",

pages = "G3.59.1--G3.59.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

}

TY - JOUR

T1 - Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy

AU - Goss, S. H.

AU - Young, A. P.

AU - Brillson, L. J.

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2001

Y1 - 2001

UR - http://www.scopus.com/inward/record.url?scp=85010733507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85010733507&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/record.url?scp=0035559583&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035559583&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85010733507

SN - 0272-9172

VL - 639

SP - G3.59.1-G3.59.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -