Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	G3.59.1-G3.59.6
Journal	Materials Research Society Symposium - Proceedings
Volume	639
State	Published - 2001
Externally published	Yes
Event	GaN and Related Alloys 2000 - Boston, MA, United States Duration: Nov 27 2000 → Dec 1 2000

ASJC Scopus Subject Areas

@article{e3379c0a4f5a4a2dbc4f726fd90f1111,

title = "Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy",

author = "Goss, \{S. H.\} and Young, \{A. P.\} and Brillson, \{L. J.\} and Look, \{D. C.\} and Molnar, \{R. J.\}",

year = "2001",

language = "English",

volume = "639",

pages = "G3.59.1--G3.59.6",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "GaN and Related Alloys 2000 ; Conference date: 27-11-2000 Through 01-12-2000",

}

TY - JOUR

T1 - Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy

AU - Goss, S. H.

AU - Young, A. P.

AU - Brillson, L. J.

AU - Look, D. C.

AU - Molnar, R. J.

PY - 2001

Y1 - 2001

UR - https://www.scopus.com/pages/publications/85010733507

UR - https://www.scopus.com/pages/publications/85010733507#tab=citedBy

UR - https://www.scopus.com/pages/publications/0035559583

UR - http://www.scopus.com/inward/citedby.url?scp=0035559583&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85010733507

SN - 0272-9172

VL - 639

SP - G3.59.1-G3.59.6

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - GaN and Related Alloys 2000

Y2 - 27 November 2000 through 1 December 2000

ER -