Dislocation-independent mobility in lattice-mismatched epitaxy: Application to GaN

D. C. Look; C. E. Stutz; R. J. Molnar; K. Saarinen; Z. Liliental-Weber

doi:10.1016/S0038-1098(01)00010-2

Dislocation-independent mobility in lattice-mismatched epitaxy: Application to GaN

D. C. Look, C. E. Stutz, R. J. Molnar, K. Saarinen, Z. Liliental-Weber

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	571-575
Number of pages	5
Journal	Solid State Communications
Volume	117
Issue number	10
DOIs	https://doi.org/10.1016/S0038-1098(01)00010-2
State	Published - Feb 20 2001

ASJC Scopus Subject Areas

General Chemistry
Condensed Matter Physics
Materials Chemistry

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10.1016/S0038-1098(01)00010-2

Cite this

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title = "Dislocation-independent mobility in lattice-mismatched epitaxy: Application to GaN",

author = "Look, {D. C.} and Stutz, {C. E.} and Molnar, {R. J.} and K. Saarinen and Z. Liliental-Weber",

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AU - Look, D. C.

AU - Stutz, C. E.

AU - Molnar, R. J.

AU - Saarinen, K.

AU - Liliental-Weber, Z.

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JO - Solid State Communications

JF - Solid State Communications

IS - 10

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Dislocation-independent mobility in lattice-mismatched epitaxy: Application to GaN

ASJC Scopus Subject Areas

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