Dislocation-related electron capture behaviour of traps in n-type GaN

Z. Q. Fang; D. C. Look; L. Polenta

doi:10.1088/0953-8984/14/48/351

Dislocation-related electron capture behaviour of traps in n-type GaN

Z. Q. Fang, D. C. Look, L. Polenta

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	13061-13068
Number of pages	8
Journal	Journal of Physics Condensed Matter
Volume	14
Issue number	48
DOIs	https://doi.org/10.1088/0953-8984/14/48/351
State	Published - Dec 16 2002

ASJC Scopus Subject Areas

General Materials Science
Condensed Matter Physics

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title = "Dislocation-related electron capture behaviour of traps in n-type GaN",

author = "Fang, \{Z. Q.\} and Look, \{D. C.\} and L. Polenta",

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AU - Fang, Z. Q.

AU - Look, D. C.

AU - Polenta, L.

PY - 2002/12/16

Y1 - 2002/12/16

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M3 - Article

AN - SCOPUS:0037122090

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EP - 13068

JO - Journal of Physics Condensed Matter

JF - Journal of Physics Condensed Matter

IS - 48

ER -

Dislocation-related electron capture behaviour of traps in n-type GaN

ASJC Scopus Subject Areas

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