Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

J. E. Van Nostrand; J. Solomon; A. Saxler; Q. H. Xie; D. C. Reynolds; D. C. Look

doi:10.1063/1.373608

Dissociation of Al₂O₃(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

J. E. Van Nostrand, J. Solomon, A. Saxler, Q. H. Xie, D. C. Reynolds, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	8766-8772
Number of pages	7
Journal	Journal of Applied Physics
Volume	87
Issue number	12
DOIs	https://doi.org/10.1063/1.373608
State	Published - Jun 15 2000

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.373608

Cite this

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title = "Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy",

author = "{Van Nostrand}, {J. E.} and J. Solomon and A. Saxler and Xie, {Q. H.} and Reynolds, {D. C.} and Look, {D. C.}",

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T1 - Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

AU - Van Nostrand, J. E.

AU - Solomon, J.

AU - Saxler, A.

AU - Xie, Q. H.

AU - Reynolds, D. C.

AU - Look, D. C.

PY - 2000/6/15

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IS - 12

ER -

Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

ASJC Scopus Subject Areas

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Dissociation of Al₂O₃(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy