Donor and acceptor concentrations from a single mobility measurement in degenerate semiconductors: ZnO

D. C. Look, R. C. Scott, K. D. Leedy, B. Bayraktaroglu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices II
DOIs
StatePublished - 2011
EventOxide-Based Materials and Devices II - San Francisco, CA, United States
Duration: Jan 23 2011Jan 26 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume7940
ISSN (Print)0277-786X

Conference

ConferenceOxide-Based Materials and Devices II
Country/TerritoryUnited States
CitySan Francisco, CA
Period1/23/111/26/11

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • degenerate
  • donor and acceptor concentration
  • mobility theory
  • ZnO

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