Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°C

D. C. Look; G. D. Robinson; J. R. Sizelove; C. E. Stutz

doi:10.1063/1.109171

Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°C

D. C. Look, G. D. Robinson, J. R. Sizelove, C. E. Stutz

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3004-3006
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	23
DOIs	https://doi.org/10.1063/1.109171
State	Published - 1993

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°C",

author = "Look, {D. C.} and Robinson, {G. D.} and Sizelove, {J. R.} and Stutz, {C. E.}",

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journal = "Applied Physics Letters",

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AU - Look, D. C.

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AU - Sizelove, J. R.

AU - Stutz, C. E.

PY - 1993

Y1 - 1993

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

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Donor and acceptor concentrations in molecular beam epitaxial GaAs grown at 300 and 400°C

ASJC Scopus Subject Areas

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