Dopant profiles in heavily doped ZnO

B. Claflin, K. D. Leedy, D. C. Look

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Original languageEnglish
Title of host publicationOxide-Based Materials and Devices IV
DOIs
StatePublished - 2013
EventOxide-Based Materials and Devices IV - San Francisco, CA, United States
Duration: Feb 3 2013Feb 6 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8626
ISSN (Print)0277-786X

Conference

ConferenceOxide-Based Materials and Devices IV
Country/TerritoryUnited States
CitySan Francisco, CA
Period2/3/132/6/13

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Keywords

  • Composition
  • Ga doping
  • Hall effect
  • Transparent conductive oxide (TCO)
  • X-ray photoelectron spectroscopy (XPS)
  • ZnO

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