Dopant profiles in heavily doped ZnO

Bruce Claflin; Kevin D. Leedy; David C. Look

doi:10.1117/1.OE.52.5.053801

Dopant profiles in heavily doped ZnO

Bruce Claflin, Kevin D. Leedy, David C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	053801
Journal	Optical Engineering
Volume	52
Issue number	5
DOIs	https://doi.org/10.1117/1.OE.52.5.053801
State	Published - 2013

ASJC Scopus Subject Areas

Atomic and Molecular Physics, and Optics
General Engineering

Keywords

composition
Ga doping
Hall effect
x-ray photoelectron spectroscopy
ZnO

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10.1117/1.OE.52.5.053801

Cite this

@article{b70465fd59314746bf158cfcd6572169,

title = "Dopant profiles in heavily doped ZnO",

keywords = "composition, Ga doping, Hall effect, x-ray photoelectron spectroscopy, ZnO",

author = "Bruce Claflin and Leedy, {Kevin D.} and Look, {David C.}",

year = "2013",

doi = "10.1117/1.OE.52.5.053801",

language = "English",

volume = "52",

journal = "Optical Engineering",

issn = "0091-3286",

number = "5",

}

TY - JOUR

T1 - Dopant profiles in heavily doped ZnO

AU - Claflin, Bruce

AU - Leedy, Kevin D.

AU - Look, David C.

PY - 2013

Y1 - 2013

KW - composition

KW - Ga doping

KW - Hall effect

KW - x-ray photoelectron spectroscopy

KW - ZnO

UR - http://www.scopus.com/inward/record.url?scp=84880502853&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84880502853&partnerID=8YFLogxK

U2 - 10.1117/1.OE.52.5.053801

DO - 10.1117/1.OE.52.5.053801

M3 - Article

AN - SCOPUS:84880502853

SN - 0091-3286

VL - 52

JO - Optical Engineering

JF - Optical Engineering

IS - 5

M1 - 053801

ER -

Dopant profiles in heavily doped ZnO

ASJC Scopus Subject Areas

Keywords

Access to Document

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