Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

Wook Kim; A. E. Botchkarev; H. Morkoç; Z. Q. Fang; D. C. Look; David J. Smith

doi:10.1063/1.369044

Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

Wook Kim, A. E. Botchkarev, H. Morkoç, Z. Q. Fang, D. C. Look, David J. Smith

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	6680-6685
Number of pages	6
Journal	Journal of Applied Physics
Volume	84
Issue number	12
DOIs	https://doi.org/10.1063/1.369044
State	Published - Dec 15 1998

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.369044

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title = "Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy",

author = "Wook Kim and Botchkarev, {A. E.} and H. Morko{\c c} and Fang, {Z. Q.} and Look, {D. C.} and Smith, {David J.}",

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AU - Morkoç, H.

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AU - Look, D. C.

AU - Smith, David J.

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Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy

ASJC Scopus Subject Areas

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