| Original language | English |
|---|---|
| Pages (from-to) | 6680-6685 |
| Number of pages | 6 |
| Journal | Journal of Applied Physics |
| Volume | 84 |
| Issue number | 12 |
| DOIs | |
| State | Published - Dec 15 1998 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
Effect of ammonia flow rate on impurity incorporation and material properties of Si-doped GaN epitaxial films grown by reactive molecular beam epitaxy
- Wook Kim
- , A. E. Botchkarev
- , H. Morkoç
- , Z. Q. Fang
- , D. C. Look
- , David J. Smith
Research output: Contribution to journal › Article › peer-review