Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs

Z. Q. Fang; D. C. Look; H. Yamamoto; H. Shimakura

doi:10.1063/1.117278

Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs

Z. Q. Fang, D. C. Look, H. Yamamoto, H. Shimakura

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3417-3419
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	22
DOIs	https://doi.org/10.1063/1.117278
State	Published - Nov 25 1996

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs",

author = "Fang, \{Z. Q.\} and Look, \{D. C.\} and H. Yamamoto and H. Shimakura",

year = "1996",

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AU - Fang, Z. Q.

AU - Look, D. C.

AU - Yamamoto, H.

AU - Shimakura, H.

PY - 1996/11/25

Y1 - 1996/11/25

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

Effect of multistep wafer-annealing on main traps in Czochralski-grown semi-insulating GaAs

ASJC Scopus Subject Areas

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