Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO

Robin C. Scott; Kevin D. Leedy; Burhan Bayraktaroglu; David C. Look; Yong Hang Zhang

doi:10.1016/j.jcrysgro.2011.03.002

Effects of Ar vs. O₂ ambient on pulsed-laser-deposited Ga-doped ZnO

Robin C. Scott
, Kevin D. Leedy
, Burhan Bayraktaroglu
, David C. Look
, Yong Hang Zhang

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	110-114
Number of pages	5
Journal	Journal of Crystal Growth
Volume	324
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2011.03.002
State	Published - Jun 1 2011

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

Keywords

A3. Pulsed laser deposition
B1. Transparent conductive oxide

Access to Document

10.1016/j.jcrysgro.2011.03.002

Cite this

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title = "Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO",

keywords = "A3. Pulsed laser deposition, B1. Transparent conductive oxide",

author = "Scott, \{Robin C.\} and Leedy, \{Kevin D.\} and Burhan Bayraktaroglu and Look, \{David C.\} and Zhang, \{Yong Hang\}",

year = "2011",

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day = "1",

doi = "10.1016/j.jcrysgro.2011.03.002",

language = "English",

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AU - Scott, Robin C.

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AU - Look, David C.

AU - Zhang, Yong Hang

PY - 2011/6/1

Y1 - 2011/6/1

KW - A3. Pulsed laser deposition

KW - B1. Transparent conductive oxide

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DO - 10.1016/j.jcrysgro.2011.03.002

M3 - Article

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SN - 0022-0248

VL - 324

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EP - 114

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

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