Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Evan M. Cornuelle; Tyler A. Growden; David F. Storm; Elliott R. Brown; Weidong Zhang; Brian P. Downey; Vikrant Gokhale; Laura B. Ruppalt; James G. Champlain; Prudhvi Peri; Martha R. McCartney; David J. Smith; David J. Meyer; Paul R. Berger

doi:10.1063/5.0005062

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²

Evan M. Cornuelle, Tyler A. Growden, David F. Storm, Elliott R. Brown, Weidong Zhang, Brian P. Downey, Vikrant Gokhale, Laura B. Ruppalt, James G. Champlain, Prudhvi Peri, Martha R. McCartney, David J. Smith, David J. Meyer, Paul R. Berger

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	055307
Journal	AIP Advances
Volume	10
Issue number	5
DOIs	https://doi.org/10.1063/5.0005062
State	Published - May 1 2020
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

Access to Document

10.1063/5.0005062

Cite this

Cornuelle, E. M., Growden, T. A., Storm, D. F., Brown, E. R., Zhang, W., Downey, B. P., Gokhale, V., Ruppalt, L. B., Champlain, J. G., Peri, P., McCartney, M. R., Smith, D. J., Meyer, D. J., & Berger, P. R. (2020). Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm². AIP Advances, 10(5), Article 055307. https://doi.org/10.1063/5.0005062

Cornuelle, EM, Growden, TA, Storm, DF, Brown, ER, Zhang, W, Downey, BP, Gokhale, V, Ruppalt, LB, Champlain, JG, Peri, P, McCartney, MR, Smith, DJ, Meyer, DJ & Berger, PR 2020, 'Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²', AIP Advances, vol. 10, no. 5, 055307. https://doi.org/10.1063/5.0005062

@article{15cf40b013014b1aaf39fa4b2a07edf6,

title = "Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2",

author = "Cornuelle, {Evan M.} and Growden, {Tyler A.} and Storm, {David F.} and Brown, {Elliott R.} and Weidong Zhang and Downey, {Brian P.} and Vikrant Gokhale and Ruppalt, {Laura B.} and Champlain, {James G.} and Prudhvi Peri and McCartney, {Martha R.} and Smith, {David J.} and Meyer, {David J.} and Berger, {Paul R.}",

note = "Publisher Copyright: {\textcopyright} 2020 Author(s).",

year = "2020",

month = may,

day = "1",

doi = "10.1063/5.0005062",

language = "English",

volume = "10",

journal = "AIP Advances",

issn = "2158-3226",

number = "5",

}

TY - JOUR

T1 - Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

AU - Cornuelle, Evan M.

AU - Growden, Tyler A.

AU - Storm, David F.

AU - Brown, Elliott R.

AU - Zhang, Weidong

AU - Downey, Brian P.

AU - Gokhale, Vikrant

AU - Ruppalt, Laura B.

AU - Champlain, James G.

AU - Peri, Prudhvi

AU - McCartney, Martha R.

AU - Smith, David J.

AU - Meyer, David J.

AU - Berger, Paul R.

PY - 2020/5/1

Y1 - 2020/5/1

UR - http://www.scopus.com/inward/record.url?scp=85092027492&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85092027492&partnerID=8YFLogxK

U2 - 10.1063/5.0005062

DO - 10.1063/5.0005062

M3 - Article

AN - SCOPUS:85092027492

SN - 2158-3226

VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 055307

ER -

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²