Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

Evan M. Cornuelle; Tyler A. Growden; David F. Storm; Elliott R. Brown; Weidong Zhang; Brian P. Downey; Vikrant Gokhale; Laura B. Ruppalt; James G. Champlain; Prudhvi Peri; Martha R. McCartney; David J. Smith; David J. Meyer; Paul R. Berger

doi:10.1063/5.0005062

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²

Evan M. Cornuelle
, Tyler A. Growden
, David F. Storm
, Elliott R. Brown
, Weidong Zhang
, Brian P. Downey
, Vikrant Gokhale
, Laura B. Ruppalt
, James G. Champlain
, Prudhvi Peri
, Martha R. McCartney
, David J. Smith
, David J. Meyer
, Paul R. Berger

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	055307
Journal	AIP Advances
Volume	10
Issue number	5
DOIs	https://doi.org/10.1063/5.0005062
State	Published - May 1 2020
Externally published	Yes

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/5.0005062

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Cornuelle, E. M., Growden, T. A., Storm, D. F., Brown, E. R., Zhang, W., Downey, B. P., Gokhale, V., Ruppalt, L. B., Champlain, J. G., Peri, P., McCartney, M. R., Smith, D. J., Meyer, D. J., & Berger, P. R. (2020). Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm². AIP Advances, 10(5), Article 055307. https://doi.org/10.1063/5.0005062

Cornuelle, EM, Growden, TA, Storm, DF, Brown, ER, Zhang, W, Downey, BP, Gokhale, V, Ruppalt, LB, Champlain, JG, Peri, P, McCartney, MR, Smith, DJ, Meyer, DJ & Berger, PR 2020, 'Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²', AIP Advances, vol. 10, no. 5, 055307. https://doi.org/10.1063/5.0005062

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title = "Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2",

author = "Cornuelle, \{Evan M.\} and Growden, \{Tyler A.\} and Storm, \{David F.\} and Brown, \{Elliott R.\} and Weidong Zhang and Downey, \{Brian P.\} and Vikrant Gokhale and Ruppalt, \{Laura B.\} and Champlain, \{James G.\} and Prudhvi Peri and McCartney, \{Martha R.\} and Smith, \{David J.\} and Meyer, \{David J.\} and Berger, \{Paul R.\}",

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AU - Cornuelle, Evan M.

AU - Growden, Tyler A.

AU - Storm, David F.

AU - Brown, Elliott R.

AU - Zhang, Weidong

AU - Downey, Brian P.

AU - Gokhale, Vikrant

AU - Ruppalt, Laura B.

AU - Champlain, James G.

AU - Peri, Prudhvi

AU - McCartney, Martha R.

AU - Smith, David J.

AU - Meyer, David J.

AU - Berger, Paul R.

PY - 2020/5/1

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AN - SCOPUS:85092027492

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VL - 10

JO - AIP Advances

JF - AIP Advances

IS - 5

M1 - 055307

ER -

Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm2

ASJC Scopus Subject Areas

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Effects of growth temperature on electrical properties of GaN/AlN based resonant tunneling diodes with peak current density up to 1.01 MA/cm²