Effects of in profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

D. C. Look; B. Jogai; R. Kaspi; J. L. Ebel; K. R. Evans; R. L. Jones; K. Nakano; R. E. Sherriff; C. E. Stutz; G. C. DeSalvo; C. Ito

doi:10.1063/1.360862

Effects of in profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

D. C. Look, B. Jogai, R. Kaspi, J. L. Ebel, K. R. Evans, R. L. Jones, K. Nakano, R. E. Sherriff, C. E. Stutz, G. C. DeSalvo, C. Ito

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	540-544
Number of pages	5
Journal	Journal of Applied Physics
Volume	79
Issue number	1
DOIs	https://doi.org/10.1063/1.360862
State	Published - Jan 1 1996

ASJC Scopus Subject Areas

General Physics and Astronomy

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10.1063/1.360862

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@article{6c87beb1e96440ec899ac441621d495e,

title = "Effects of in profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors",

author = "Look, {D. C.} and B. Jogai and R. Kaspi and Ebel, {J. L.} and Evans, {K. R.} and Jones, {R. L.} and K. Nakano and Sherriff, {R. E.} and Stutz, {C. E.} and DeSalvo, {G. C.} and C. Ito",

year = "1996",

month = jan,

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doi = "10.1063/1.360862",

language = "English",

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pages = "540--544",

journal = "Journal of Applied Physics",

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TY - JOUR

T1 - Effects of in profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

AU - Look, D. C.

AU - Jogai, B.

AU - Kaspi, R.

AU - Ebel, J. L.

AU - Evans, K. R.

AU - Jones, R. L.

AU - Nakano, K.

AU - Sherriff, R. E.

AU - Stutz, C. E.

AU - DeSalvo, G. C.

AU - Ito, C.

PY - 1996/1/1

Y1 - 1996/1/1

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U2 - 10.1063/1.360862

DO - 10.1063/1.360862

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AN - SCOPUS:4243084630

SN - 0021-8979

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 1

ER -

Effects of in profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors

ASJC Scopus Subject Areas

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