| Original language | English |
|---|---|
| Pages (from-to) | 540-544 |
| Number of pages | 5 |
| Journal | Journal of Applied Physics |
| Volume | 79 |
| Issue number | 1 |
| DOIs | |
| State | Published - Jan 1 1996 |
ASJC Scopus Subject Areas
- General Physics and Astronomy
Effects of in profile on material and device properties of AlGaAs/InGaAs/GaAs high electron mobility transistors
- D. C. Look
- , B. Jogai
- , R. Kaspi
- , J. L. Ebel
- , K. R. Evans
- , R. L. Jones
- , K. Nakano
- , R. E. Sherriff
- , C. E. Stutz
- , G. C. DeSalvo
- , C. Ito
Research output: Contribution to journal › Article › peer-review