Efficient Terahertz Emission From Ballistic Transport Enhanced n-i-p-n-i-p Superlattice Photomixers

S. Preu; F. H. Renner; S. Malzer; G. H. Döhler; L. J. Wang; M. Hanson; A. C. Gossard; T. L.J. Wilkinson; E. R. Brown

doi:10.1063/1.2743400

Efficient Terahertz Emission From Ballistic Transport Enhanced n-i-p-n-i-p Superlattice Photomixers

S. Preu, F. H. Renner, S. Malzer, G. H. Döhler, L. J. Wang, M. Hanson, A. C. Gossard, T. L.J. Wilkinson, E. R. Brown

Research output: Contribution to journal › Article › peer-review

Abstract

The authors report on photomixing terahertz sources that overcome the transit time versus RC -time trade-off and allow for independent optimization of both of them, using a n-i-p-n-i-p superlattice. Furthermore, they take advantage of ballistic transport for reduced transit times. Apart from more favorable material parameters, In(Al)GaAs photomixers benefit from the advanced telecommunication laser technology around 1.55 μm as compared to GaAs. In such devices, a terahertz-power output of 1 μW has been achieved at 0.4 THz at a photocurrent of 3.8 mA. A comparison between corresponding GaAs- and InGaAs-based n-i-p-n-i-p photomixers reveals an improvement of performance by at least an order of magnitude for the latter one.

Original language	English
Article number	212115
Journal	Applied Physics Letters
Volume	90
Issue number	21
DOIs	https://doi.org/10.1063/1.2743400
State	Published - 2007
Externally published	Yes

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Efficient Terahertz Emission From Ballistic Transport Enhanced n-i-p-n-i-p Superlattice Photomixers",

abstract = "The authors report on photomixing terahertz sources that overcome the transit time versus RC -time trade-off and allow for independent optimization of both of them, using a n-i-p-n-i-p superlattice. Furthermore, they take advantage of ballistic transport for reduced transit times. Apart from more favorable material parameters, In(Al)GaAs photomixers benefit from the advanced telecommunication laser technology around 1.55 μm as compared to GaAs. In such devices, a terahertz-power output of 1 μW has been achieved at 0.4 THz at a photocurrent of 3.8 mA. A comparison between corresponding GaAs- and InGaAs-based n-i-p-n-i-p photomixers reveals an improvement of performance by at least an order of magnitude for the latter one.",

author = "S. Preu and Renner, \{F. H.\} and S. Malzer and D{\"o}hler, \{G. H.\} and Wang, \{L. J.\} and M. Hanson and Gossard, \{A. C.\} and Wilkinson, \{T. L.J.\} and Brown, \{E. R.\}",

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volume = "90",

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AU - Preu, S.

AU - Renner, F. H.

AU - Malzer, S.

AU - Döhler, G. H.

AU - Wang, L. J.

AU - Hanson, M.

AU - Gossard, A. C.

AU - Wilkinson, T. L.J.

AU - Brown, E. R.

PY - 2007

Y1 - 2007

N2 - The authors report on photomixing terahertz sources that overcome the transit time versus RC -time trade-off and allow for independent optimization of both of them, using a n-i-p-n-i-p superlattice. Furthermore, they take advantage of ballistic transport for reduced transit times. Apart from more favorable material parameters, In(Al)GaAs photomixers benefit from the advanced telecommunication laser technology around 1.55 μm as compared to GaAs. In such devices, a terahertz-power output of 1 μW has been achieved at 0.4 THz at a photocurrent of 3.8 mA. A comparison between corresponding GaAs- and InGaAs-based n-i-p-n-i-p photomixers reveals an improvement of performance by at least an order of magnitude for the latter one.

AB - The authors report on photomixing terahertz sources that overcome the transit time versus RC -time trade-off and allow for independent optimization of both of them, using a n-i-p-n-i-p superlattice. Furthermore, they take advantage of ballistic transport for reduced transit times. Apart from more favorable material parameters, In(Al)GaAs photomixers benefit from the advanced telecommunication laser technology around 1.55 μm as compared to GaAs. In such devices, a terahertz-power output of 1 μW has been achieved at 0.4 THz at a photocurrent of 3.8 mA. A comparison between corresponding GaAs- and InGaAs-based n-i-p-n-i-p photomixers reveals an improvement of performance by at least an order of magnitude for the latter one.

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ER -

Efficient Terahertz Emission From Ballistic Transport Enhanced n-i-p-n-i-p Superlattice Photomixers

Abstract

ASJC Scopus Subject Areas

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