Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique

Z. Q. Fang; D. C. Reynolds; D. C. Look; M. G. Mier; R. L. Jones; R. L. Henry

Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique

Z. Q. Fang, D. C. Reynolds, D. C. Look, M. G. Mier, R. L. Jones, R. L. Henry

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to conference › Paper › peer-review

Original language	English
Pages	25-28
Number of pages	4
State	Published - 1999
Event	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: Jun 1 1998 → Jun 5 1998

Conference

Conference	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
City	Berkeley, CA, USA
Period	6/1/98 → 6/5/98

ASJC Scopus Subject Areas

General Engineering

Cite this

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title = "Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique",

author = "Fang, {Z. Q.} and Reynolds, {D. C.} and Look, {D. C.} and Mier, {M. G.} and Jones, {R. L.} and Henry, {R. L.}",

year = "1999",

language = "English",

pages = "25--28",

note = "Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) ; Conference date: 01-06-1998 Through 05-06-1998",

}

TY - CONF

T1 - Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique

AU - Fang, Z. Q.

AU - Reynolds, D. C.

AU - Look, D. C.

AU - Mier, M. G.

AU - Jones, R. L.

AU - Henry, R. L.

PY - 1999

Y1 - 1999

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M3 - Paper

AN - SCOPUS:0032598552

SP - 25

EP - 28

T2 - Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)

Y2 - 1 June 1998 through 5 June 1998

ER -

Electrical and optical properties of annealed semi-insulating GaAs grown by vertical zone melt technique

Conference

ASJC Scopus Subject Areas

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Cite this