Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO

D. C. Look; D. C. Reynolds; J. W. Hemsky; J. R. Sizelove; R. L. Jones; C. W. Litton; T. Wille; G. Cantwell; W. C. Harsch

doi:10.1109/SIM.1998.785130

Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO

D. C. Look, D. C. Reynolds, J. W. Hemsky, J. R. Sizelove, R. L. Jones, C. W. Litton, T. Wille, G. Cantwell, W. C. Harsch

Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) and photoluminescence (PL) measurements. From fits to the TDH data, the dominant donor has a concentration ND of about 1 × 1017 cm-3 and an energy of about 60 meV, close to the expected hydrogenic value, whereas the total acceptor concentration NA is much lower, about 2 × 1015 cm-3. The 2-K PL data include a series of at least seven sharp lines over the energy range 3.356 - 3.366 eV, and from polarization, magnetic-field, and annealing (up to 1000°C) experiments, these lines are interpreted as donor-bound excitons associated with donor complexes having different spacings between the atomic species. Electron-irradiation experiments show an electrical and optical threshold, attributed to Zn displacements, at an electron bombardment energy of about 1.3 MeV. The irradiation creates acceptors and destroys shallow donors, but these effects are produced at much lower rates than those found in most other common semiconductor materials, such as Si, GaAs, and GaN.

Original language	English
Title of host publication	Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)
Publisher	IEEE
Pages	301-304
Number of pages	4
ISBN (Print)	0-7803-4354-9
DOIs	https://doi.org/10.1109/SIM.1998.785130
State	Published - 1999
Event	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) - Berkeley, CA, USA Duration: Jun 1 1998 → Jun 5 1998

Conference

Conference	Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)
City	Berkeley, CA, USA
Period	6/1/98 → 6/5/98

ASJC Scopus Subject Areas

General Engineering

Keywords

Zinc oxide
Photoluminescence
Optical polarization
Annealing
Excitons
Atom optics
Electron optics
Semiconductor materials
Gallium arsenide
Gallium nitride

Disciplines

Electrical and Computer Engineering
Atomic, Molecular and Optical Physics

Access to Document

10.1109/SIM.1998.785130

Cite this

Look, D. C., Reynolds, D. C., Hemsky, J. W., Sizelove, J. R., Jones, R. L., Litton, C. W., Wille, T., Cantwell, G., & Harsch, W. C. (1999). Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO. In Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159) (pp. 301-304). IEEE. https://doi.org/10.1109/SIM.1998.785130

Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO. / Look, D. C.; Reynolds, D. C.; Hemsky, J. W. et al.
Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159). IEEE, 1999. p. 301-304.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Look, DC, Reynolds, DC, Hemsky, JW, Sizelove, JR, Jones, RL, Litton, CW, Wille, T, Cantwell, G & Harsch, WC 1999, Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO. in Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159). IEEE, pp. 301-304, Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X), Berkeley, CA, USA, 6/1/98. https://doi.org/10.1109/SIM.1998.785130

@inproceedings{50b5e05e26e14b7a891230a84ce78a55,

title = "Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO",

abstract = "Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) and photoluminescence (PL) measurements. From fits to the TDH data, the dominant donor has a concentration ND of about 1 × 1017 cm-3 and an energy of about 60 meV, close to the expected hydrogenic value, whereas the total acceptor concentration NA is much lower, about 2 × 1015 cm-3. The 2-K PL data include a series of at least seven sharp lines over the energy range 3.356 - 3.366 eV, and from polarization, magnetic-field, and annealing (up to 1000°C) experiments, these lines are interpreted as donor-bound excitons associated with donor complexes having different spacings between the atomic species. Electron-irradiation experiments show an electrical and optical threshold, attributed to Zn displacements, at an electron bombardment energy of about 1.3 MeV. The irradiation creates acceptors and destroys shallow donors, but these effects are produced at much lower rates than those found in most other common semiconductor materials, such as Si, GaAs, and GaN.",

keywords = "Zinc oxide, Photoluminescence, Optical polarization, Annealing, Excitons, Atom optics, Electron optics, Semiconductor materials, Gallium arsenide, Gallium nitride",

author = "Look, {D. C.} and Reynolds, {D. C.} and Hemsky, {J. W.} and Sizelove, {J. R.} and Jones, {R. L.} and Litton, {C. W.} and T. Wille and G. Cantwell and Harsch, {W. C.}",

year = "1999",

doi = "10.1109/SIM.1998.785130",

language = "English",

isbn = "0-7803-4354-9",

pages = "301--304",

booktitle = "Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)",

publisher = "IEEE",

note = "Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X) ; Conference date: 01-06-1998 Through 05-06-1998",

}

TY - GEN

T1 - Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO

AU - Look, D. C.

AU - Reynolds, D. C.

AU - Hemsky, J. W.

AU - Sizelove, J. R.

AU - Jones, R. L.

AU - Litton, C. W.

AU - Wille, T.

AU - Cantwell, G.

AU - Harsch, W. C.

PY - 1999

Y1 - 1999

N2 - Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) and photoluminescence (PL) measurements. From fits to the TDH data, the dominant donor has a concentration ND of about 1 × 1017 cm-3 and an energy of about 60 meV, close to the expected hydrogenic value, whereas the total acceptor concentration NA is much lower, about 2 × 1015 cm-3. The 2-K PL data include a series of at least seven sharp lines over the energy range 3.356 - 3.366 eV, and from polarization, magnetic-field, and annealing (up to 1000°C) experiments, these lines are interpreted as donor-bound excitons associated with donor complexes having different spacings between the atomic species. Electron-irradiation experiments show an electrical and optical threshold, attributed to Zn displacements, at an electron bombardment energy of about 1.3 MeV. The irradiation creates acceptors and destroys shallow donors, but these effects are produced at much lower rates than those found in most other common semiconductor materials, such as Si, GaAs, and GaN.

AB - Large-diameter (up to 3-inch), n-type ZnO boules grown by a new vapor-phase transport method were studied by temperature-dependent Hall-effect (TDH) and photoluminescence (PL) measurements. From fits to the TDH data, the dominant donor has a concentration ND of about 1 × 1017 cm-3 and an energy of about 60 meV, close to the expected hydrogenic value, whereas the total acceptor concentration NA is much lower, about 2 × 1015 cm-3. The 2-K PL data include a series of at least seven sharp lines over the energy range 3.356 - 3.366 eV, and from polarization, magnetic-field, and annealing (up to 1000°C) experiments, these lines are interpreted as donor-bound excitons associated with donor complexes having different spacings between the atomic species. Electron-irradiation experiments show an electrical and optical threshold, attributed to Zn displacements, at an electron bombardment energy of about 1.3 MeV. The irradiation creates acceptors and destroys shallow donors, but these effects are produced at much lower rates than those found in most other common semiconductor materials, such as Si, GaAs, and GaN.

KW - Zinc oxide

KW - Photoluminescence

KW - Optical polarization

KW - Annealing

KW - Excitons

KW - Atom optics

KW - Electron optics

KW - Semiconductor materials

KW - Gallium arsenide

KW - Gallium nitride

UR - http://www.scopus.com/inward/record.url?scp=0032598516&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032598516&partnerID=8YFLogxK

UR - https://corescholar.libraries.wright.edu/physics/693

U2 - 10.1109/SIM.1998.785130

DO - 10.1109/SIM.1998.785130

M3 - Conference contribution

AN - SCOPUS:0032598516

SN - 0-7803-4354-9

SP - 301

EP - 304

BT - Semiconducting and Insulating Materials 1998. Proceedings of the 10th Conference on Semiconducting and Insulating Materials (SIMC-X) (Cat. No.98CH36159)

PB - IEEE

T2 - Proceedings of the 1998 10th Conference on Semiconducting and Insulating Materials (SIMC-X)

Y2 - 1 June 1998 through 5 June 1998

ER -

Electrical and Optical Properties of As-Grown and Electron-Irradiated ZnO

Abstract

Conference

ASJC Scopus Subject Areas

Keywords

Disciplines

Access to Document

Other files and links

Cite this