Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2

Qianghua Xie; J. E. Van Nostrand; R. L. Jones; J. Sizelove; D. C. Look

doi:10.1016/S0022-0248(99)00379-6

Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb₁ and Sb₂

Qianghua Xie, J. E. Van Nostrand, R. L. Jones, J. Sizelove, D. C. Look

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	255-265
Number of pages	11
Journal	Journal of Crystal Growth
Volume	207
Issue number	4
DOIs	https://doi.org/10.1016/S0022-0248(99)00379-6
State	Published - Dec 15 1999

ASJC Scopus Subject Areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(99)00379-6

Cite this

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title = "Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2",

author = "Qianghua Xie and {Van Nostrand}, {J. E.} and Jones, {R. L.} and J. Sizelove and Look, {D. C.}",

year = "1999",

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journal = "Journal of Crystal Growth",

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T1 - Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2

AU - Xie, Qianghua

AU - Van Nostrand, J. E.

AU - Jones, R. L.

AU - Sizelove, J.

AU - Look, D. C.

PY - 1999/12/15

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U2 - 10.1016/S0022-0248(99)00379-6

DO - 10.1016/S0022-0248(99)00379-6

M3 - Article

AN - SCOPUS:0033361751

SN - 0022-0248

VL - 207

SP - 255

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JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 4

ER -

Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb1 and Sb2

ASJC Scopus Subject Areas

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Electrical and optical properties of undoped GaSb grown by molecular beam epitaxy using cracked Sb₁ and Sb₂