Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

Z. Q. Fang, D. C. Look, R. Chandrasekaran, S. Rao, S. E. Saddow

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)456-459
Number of pages4
JournalJournal of Electronic Materials
Volume33
Issue number5
DOIs
StatePublished - May 2004

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Electrical characterizations
  • Electron traps
  • Epitaxial 6h-sic
  • Porous SiC

Cite this