Electrical characteristics of a 6H-SiC epitaxial layer grown by chemical vapor deposition on porous SiC substrate

  • Z. Q. Fang
  • , D. C. Look
  • , R. Chandrasekaran
  • , S. Rao
  • , S. E. Saddow

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)456-459
Number of pages4
JournalJournal of Electronic Materials
Volume33
Issue number5
DOIs
StatePublished - May 2004

ASJC Scopus Subject Areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Keywords

  • Electrical characterizations
  • Electron traps
  • Epitaxial 6h-sic
  • Porous SiC

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