Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Buguo Wang; Z. Q. Fang; Bruce Claflin; David Look; John Kouvetakis; Yung Kee Yeo

doi:10.1016/j.tsf.2018.03.071

Electrical characterization and deep-level transient spectroscopy of Ge_0.873Si_0.104Sn_0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

Buguo Wang, Z. Q. Fang, Bruce Claflin, David Look, John Kouvetakis, Yung Kee Yeo

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	77-84
Number of pages	8
Journal	Thin Solid Films
Volume	654
DOIs	https://doi.org/10.1016/j.tsf.2018.03.071
State	Published - May 31 2018

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Keywords

Chemical vapor deposition
Deep-level trap spectroscopy
Electrical characterization
Germanium‑silicon‑tin
Group IV semiconductor
Photodiode

Access to Document

10.1016/j.tsf.2018.03.071

Cite this

@article{e12dbb4d679d42a09c495ef2af7ebbf6,

title = "Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition",

keywords = "Chemical vapor deposition, Deep-level trap spectroscopy, Electrical characterization, Germanium‑silicon‑tin, Group IV semiconductor, Photodiode",

author = "Buguo Wang and Fang, {Z. Q.} and Bruce Claflin and David Look and John Kouvetakis and Yeo, {Yung Kee}",

note = "Publisher Copyright: {\textcopyright} 2018 Elsevier B.V.",

year = "2018",

month = may,

day = "31",

doi = "10.1016/j.tsf.2018.03.071",

language = "English",

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journal = "Thin Solid Films",

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T1 - Electrical characterization and deep-level transient spectroscopy of Ge0.873Si0.104Sn0.023 photodiode grown on Ge platform by ultra-high vacuum chemical vapor deposition

AU - Wang, Buguo

AU - Fang, Z. Q.

AU - Claflin, Bruce

AU - Look, David

AU - Kouvetakis, John

AU - Yeo, Yung Kee

PY - 2018/5/31

Y1 - 2018/5/31

KW - Chemical vapor deposition

KW - Deep-level trap spectroscopy

KW - Electrical characterization

KW - Germanium‑silicon‑tin

KW - Group IV semiconductor

KW - Photodiode

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U2 - 10.1016/j.tsf.2018.03.071

DO - 10.1016/j.tsf.2018.03.071

M3 - Article

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VL - 654

SP - 77

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JO - Thin Solid Films

JF - Thin Solid Films

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