Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

Z. Q. Fang; Q. H. Xie; D. C. Look; J. Ehret; J. E. Van Nostrand

doi:10.1007/s11664-999-0210-z

Electrical characterization of self-assembled In_0.5Ga_0.5As/GaAs quantum dots by deep level transient spectroscopy

Z. Q. Fang
, Q. H. Xie
, D. C. Look
, J. Ehret
, J. E. Van Nostrand

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	L13-L16
Journal	Journal of Electronic Materials
Volume	28
Issue number	8
DOIs	https://doi.org/10.1007/s11664-999-0210-z
State	Published - Aug 1999

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-999-0210-z

Cite this

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title = "Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy",

author = "Fang, \{Z. Q.\} and Xie, \{Q. H.\} and Look, \{D. C.\} and J. Ehret and \{Van Nostrand\}, \{J. E.\}",

year = "1999",

month = aug,

doi = "10.1007/s11664-999-0210-z",

language = "English",

volume = "28",

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journal = "Journal of Electronic Materials",

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AU - Fang, Z. Q.

AU - Xie, Q. H.

AU - Look, D. C.

AU - Ehret, J.

AU - Van Nostrand, J. E.

PY - 1999/8

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M3 - Article

AN - SCOPUS:0033312005

SN - 0361-5235

VL - 28

SP - L13-L16

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 8

ER -

Electrical characterization of self-assembled In0.5Ga0.5As/GaAs quantum dots by deep level transient spectroscopy

ASJC Scopus Subject Areas

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Electrical characterization of self-assembled In_0.5Ga_0.5As/GaAs quantum dots by deep level transient spectroscopy