Abstract
Defects can be conveniently categorized into three types: point, line, and areal. In GaN, the important point defects are vacancies and interstitials; the line defects are threading dislocations; and the areal defects are stacking faults. We have used electron irradiation to produce point defects, and temperature-dependent Hall-effect (TDK) and deep level transient spectroscopy (DLTS) measurements to study them. The TDH investigation has identified two point defects, an 0. 06-eV donor and a deep acceptor, thought to be the N vacancy and interstitial, respectively. The DLTS study has found two point-defect electron traps, at 0. 06 eV and 0. 9 eV, respectively; the 0. 06-eV trap actually has two components, with different capture kinetics. With respect to Une defects, the DLTS spectrum in as-grown GaN includes an 0. 45-eV electron trap, which has the characteristics of a dislocation, and the TDH measurements show that threading-edge dislocations are acceptor-like in n-type GaN. Finally, in samples grown by the hydride vapor phase technique, TDH measurements indicate a strongly n-type region at the GaN/AliOj interface, which may be associated with stacking faults. All of the defects discussed above can have an influence on the dc and/or ac conductivity of GaN.
Original language | English |
---|---|
Pages (from-to) | W10.5.1 - W10.5.11 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 595 |
State | Published - 2000 |
Event | The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - San Francisco, United States Duration: Nov 28 1999 → Dec 3 1999 |
ASJC Scopus Subject Areas
- General Materials Science
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Disciplines
- Electronic Devices and Semiconductor Manufacturing