Electrical measurements in GaN: Point defects and dislocations

David C. Look, Zhaoqiang Fang, Laura Polenta

Research output: Contribution to journalConference articlepeer-review

Abstract

Defects can be conveniently categorized into three types: point, line, and areal. In GaN, the important point defects are vacancies and interstitials; the line defects are threading dislocations; and the areal defects are stacking faults. We have used electron irradiation to produce point defects, and temperature-dependent Hall-effect (TDK) and deep level transient spectroscopy (DLTS) measurements to study them. The TDH investigation has identified two point defects, an 0. 06-eV donor and a deep acceptor, thought to be the N vacancy and interstitial, respectively. The DLTS study has found two point-defect electron traps, at 0. 06 eV and 0. 9 eV, respectively; the 0. 06-eV trap actually has two components, with different capture kinetics. With respect to Une defects, the DLTS spectrum in as-grown GaN includes an 0. 45-eV electron trap, which has the characteristics of a dislocation, and the TDH measurements show that threading-edge dislocations are acceptor-like in n-type GaN. Finally, in samples grown by the hydride vapor phase technique, TDH measurements indicate a strongly n-type region at the GaN/AliOj interface, which may be associated with stacking faults. All of the defects discussed above can have an influence on the dc and/or ac conductivity of GaN.
Original languageEnglish
Pages (from-to)W10.5.1 - W10.5.11
JournalMaterials Research Society Symposium - Proceedings
Volume595
StatePublished - 2000
EventThe 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - San Francisco, United States
Duration: Nov 28 1999Dec 3 1999

ASJC Scopus Subject Areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Disciplines

  • Electronic Devices and Semiconductor Manufacturing

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