Electrical measurements in GaN: point defects and dislocations

David C. Look, Zhaoqiang Fang, Laura Polenta

Research output: Contribution to journal › Conference article › peer-review

Original language	English
Pages (from-to)	W10.5.1 - W10.5.11
Journal	Materials Research Society Symposium - Proceedings
Volume	595
State	Published - 2000
Event	The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' - Boston, MA, USA Duration: Nov 28 1999 → Dec 3 1999

ASJC Scopus Subject Areas

@article{1cb95f24595a4c0bad6ca057faf84d3c,

title = "Electrical measurements in GaN: point defects and dislocations",

author = "Look, {David C.} and Zhaoqiang Fang and Laura Polenta",

year = "2000",

language = "English",

volume = "595",

pages = "W10.5.1 -- W10.5.11",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

note = "The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys' ; Conference date: 28-11-1999 Through 03-12-1999",

}

TY - JOUR

T1 - Electrical measurements in GaN

T2 - The 1999 MRS Fall Meeting - Symposium W 'GaN and Related Alloys'

AU - Look, David C.

AU - Fang, Zhaoqiang

AU - Polenta, Laura

PY - 2000

Y1 - 2000

UR - http://www.scopus.com/inward/record.url?scp=17744416080&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=17744416080&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:17744416080

SN - 0272-9172

VL - 595

SP - W10.5.1 - W10.5.11

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

Y2 - 28 November 1999 through 3 December 1999

ER -