Electrical profiles in GaN/Al2O3 layers with conductive interface regions

Electrical profiles in GaN/Al₂O₃ layers with conductive interface regions

Research output: Contribution to journal › Article › peer-review

Original language	English
Journal	MRS Internet Journal of Nitride Semiconductor Research
Volume	6
DOIs	https://doi.org/10.1557/S1092578300000223
State	Published - 2001

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title = "Electrical profiles in GaN/Al2O3 layers with conductive interface regions",

author = "Look, \{D. C.\} and Hoelscher, \{J. E.\} and Brown, \{J. L.\} and Via, \{G. D.\}",

year = "2001",

doi = "10.1557/S1092578300000223",

language = "English",

volume = "6",

journal = "MRS Internet Journal of Nitride Semiconductor Research",

issn = "1092-5783",

}

TY - JOUR

T1 - Electrical profiles in GaN/Al2O3 layers with conductive interface regions

AU - Look, D. C.

AU - Hoelscher, J. E.

AU - Brown, J. L.

AU - Via, G. D.

PY - 2001

Y1 - 2001

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UR - https://www.scopus.com/pages/publications/84862384622#tab=citedBy

U2 - 10.1557/S1092578300000223

DO - 10.1557/S1092578300000223

M3 - Article

AN - SCOPUS:84862384622

SN - 1092-5783

VL - 6

JO - MRS Internet Journal of Nitride Semiconductor Research

JF - MRS Internet Journal of Nitride Semiconductor Research

ER -