Electrical properties of boron-doped p-SiGeC grown on n--Si substrate

M. Ahoujja; Y. K. Yeo; R. L. Hengehold; G. S. Pomrenke; D. C. Look; Jim Huffman

doi:10.1063/1.1290047

Electrical properties of boron-doped p-SiGeC grown on n^--Si substrate

M. Ahoujja, Y. K. Yeo, R. L. Hengehold, G. S. Pomrenke, D. C. Look, Jim Huffman

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1327-1329
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	9
DOIs	https://doi.org/10.1063/1.1290047
State	Published - Aug 28 2000

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1290047

Cite this

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title = "Electrical properties of boron-doped p-SiGeC grown on n--Si substrate",

author = "M. Ahoujja and Yeo, {Y. K.} and Hengehold, {R. L.} and Pomrenke, {G. S.} and Look, {D. C.} and Jim Huffman",

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AU - Ahoujja, M.

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AU - Hengehold, R. L.

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AU - Look, D. C.

AU - Huffman, Jim

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IS - 9

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Electrical properties of boron-doped p-SiGeC grown on n--Si substrate

ASJC Scopus Subject Areas

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Electrical properties of boron-doped p-SiGeC grown on n^--Si substrate