Electrical properties of boron-doped p-SiGeC grown on n--Si substrate

M. Ahoujja; Y. K. Yeo; R. L. Hengehold; G. S. Pomrenke; D. C. Look; Jim Huffman

doi:10.1063/1.1290047

Electrical properties of boron-doped p-SiGeC grown on n^--Si substrate

M. Ahoujja
, Y. K. Yeo
, R. L. Hengehold
, G. S. Pomrenke
, D. C. Look
, Jim Huffman

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1327-1329
Number of pages	3
Journal	Applied Physics Letters
Volume	77
Issue number	9
DOIs	https://doi.org/10.1063/1.1290047
State	Published - Aug 28 2000

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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10.1063/1.1290047

Cite this

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title = "Electrical properties of boron-doped p-SiGeC grown on n--Si substrate",

author = "M. Ahoujja and Yeo, \{Y. K.\} and Hengehold, \{R. L.\} and Pomrenke, \{G. S.\} and Look, \{D. C.\} and Jim Huffman",

year = "2000",

month = aug,

day = "28",

doi = "10.1063/1.1290047",

language = "English",

volume = "77",

pages = "1327--1329",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Electrical properties of boron-doped p-SiGeC grown on n--Si substrate

AU - Ahoujja, M.

AU - Yeo, Y. K.

AU - Hengehold, R. L.

AU - Pomrenke, G. S.

AU - Look, D. C.

AU - Huffman, Jim

PY - 2000/8/28

Y1 - 2000/8/28

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UR - https://www.scopus.com/pages/publications/0001232635#tab=citedBy

U2 - 10.1063/1.1290047

DO - 10.1063/1.1290047

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AN - SCOPUS:0001232635

SN - 0003-6951

VL - 77

SP - 1327

EP - 1329

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 9

ER -

Electrical properties of boron-doped p-SiGeC grown on n--Si substrate

ASJC Scopus Subject Areas

Access to Document

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Electrical properties of boron-doped p-SiGeC grown on n^--Si substrate