Electrical properties of molecular beam epitaxial GaAs grown at 300-450°C

D. C. Look; G. D. Robinson; J. R. Sizelove; C. E. Stutz

doi:10.1007/BF02649991

Electrical properties of molecular beam epitaxial GaAs grown at 300-450°C

D. C. Look, G. D. Robinson, J. R. Sizelove, C. E. Stutz

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1425-1428
Number of pages	4
Journal	Journal of Electronic Materials
Volume	22
Issue number	12
DOIs	https://doi.org/10.1007/BF02649991
State	Published - Dec 1993

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Keywords

Defects
GaAs
low-temperature-grown
MBE

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10.1007/BF02649991

Cite this

@article{1e5a8f19b1674c0e917ac8d17077caff,

title = "Electrical properties of molecular beam epitaxial GaAs grown at 300-450°C",

keywords = "Defects, GaAs, low-temperature-grown, MBE",

author = "Look, {D. C.} and Robinson, {G. D.} and Sizelove, {J. R.} and Stutz, {C. E.}",

year = "1993",

month = dec,

doi = "10.1007/BF02649991",

language = "English",

volume = "22",

pages = "1425--1428",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

number = "12",

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TY - JOUR

T1 - Electrical properties of molecular beam epitaxial GaAs grown at 300-450°C

AU - Look, D. C.

AU - Robinson, G. D.

AU - Sizelove, J. R.

AU - Stutz, C. E.

PY - 1993/12

Y1 - 1993/12

KW - Defects

KW - GaAs

KW - low-temperature-grown

KW - MBE

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DO - 10.1007/BF02649991

M3 - Article

AN - SCOPUS:0027809772

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EP - 1428

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 12

ER -

Electrical properties of molecular beam epitaxial GaAs grown at 300-450°C

ASJC Scopus Subject Areas

Keywords

Access to Document

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