Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO

D. C. Look; B. Wang; K. D. Leedy; D. B. Thomson

doi:10.1117/12.2042567

Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO

D. C. Look, B. Wang, K. D. Leedy, D. B. Thomson

Future of Semiconductors, a National Science Foundation Program

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English
Title of host publication	Oxide-Based Materials and Devices V
Publisher	SPIE
ISBN (Print)	9780819499004
DOIs	https://doi.org/10.1117/12.2042567
State	Published - 2014
Event	5th Annual Oxide Based Materials and Devices Conference - San Francisco, CA, United States Duration: Feb 2 2014 → Feb 5 2014

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	8987
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	5th Annual Oxide Based Materials and Devices Conference
Country/Territory	United States
City	San Francisco, CA
Period	2/2/14 → 2/5/14

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Keywords

Hall effect
Mobility
Thickness dependence
ZnO

Access to Document

10.1117/12.2042567

Cite this

Look, DC, Wang, B, Leedy, KD & Thomson, DB 2014, Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO. in Oxide-Based Materials and Devices V., 898702, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8987, SPIE, 5th Annual Oxide Based Materials and Devices Conference, San Francisco, CA, United States, 2/2/14. https://doi.org/10.1117/12.2042567

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keywords = "Hall effect, Mobility, Thickness dependence, ZnO",

author = "Look, {D. C.} and B. Wang and Leedy, {K. D.} and Thomson, {D. B.}",

year = "2014",

doi = "10.1117/12.2042567",

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isbn = "9780819499004",

series = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "5th Annual Oxide Based Materials and Devices Conference ; Conference date: 02-02-2014 Through 05-02-2014",

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T1 - Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO

AU - Look, D. C.

AU - Wang, B.

AU - Leedy, K. D.

AU - Thomson, D. B.

PY - 2014

Y1 - 2014

KW - Hall effect

KW - Mobility

KW - Thickness dependence

KW - ZnO

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U2 - 10.1117/12.2042567

DO - 10.1117/12.2042567

M3 - Conference contribution

AN - SCOPUS:84901784869

SN - 9780819499004

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Oxide-Based Materials and Devices V

PB - SPIE

T2 - 5th Annual Oxide Based Materials and Devices Conference

Y2 - 2 February 2014 through 5 February 2014

ER -

Electrical properties of ultrathin Ga-doped ZnO films on Si and ZnO

Publication series

Conference

ASJC Scopus Subject Areas

Keywords

Access to Document

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Cite this