Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, C. Balkas

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Article number043706
JournalJournal of Applied Physics
Volume100
Issue number4
DOIs
StatePublished - Jan 1 2006

ASJC Scopus Subject Areas

  • General Physics and Astronomy

Disciplines

  • Applied Mathematics
  • Applied Statistics
  • Mathematics
  • Physical Sciences and Mathematics
  • Statistics and Probability

Cite this