Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

W. C. Mitchel; W. D. Mitchell; Z. Q. Fang; D. C. Look; S. R. Smith; H. E. Smith; Igor Khlebnikov; Y. I. Khlebnikov; C. Basceri; C. Balkas

doi:10.1063/1.2227622

Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

W. C. Mitchel, W. D. Mitchell, Z. Q. Fang, D. C. Look, S. R. Smith, H. E. Smith, Igor Khlebnikov, Y. I. Khlebnikov, C. Basceri, C. Balkas

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Article number	043706
Journal	Journal of Applied Physics
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.2227622
State	Published - 2006

ASJC Scopus Subject Areas

General Physics and Astronomy

Access to Document

10.1063/1.2227622

Cite this

@article{9ce2db89e00a409eaf98296fb2370563,

title = "Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC",

author = "Mitchel, {W. C.} and Mitchell, {W. D.} and Fang, {Z. Q.} and Look, {D. C.} and Smith, {S. R.} and Smith, {H. E.} and Igor Khlebnikov and Khlebnikov, {Y. I.} and C. Basceri and C. Balkas",

year = "2006",

doi = "10.1063/1.2227622",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "4",

}

TY - JOUR

T1 - Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

AU - Mitchel, W. C.

AU - Mitchell, W. D.

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Smith, S. R.

AU - Smith, H. E.

AU - Khlebnikov, Igor

AU - Khlebnikov, Y. I.

AU - Basceri, C.

AU - Balkas, C.

PY - 2006

Y1 - 2006

UR - http://www.scopus.com/inward/record.url?scp=33748350721&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33748350721&partnerID=8YFLogxK

U2 - 10.1063/1.2227622

DO - 10.1063/1.2227622

M3 - Article

AN - SCOPUS:33748350721

SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

M1 - 043706

ER -

Electrical properties of unintentionally doped semi-insulating and conducting 6H-SiC

ASJC Scopus Subject Areas

Access to Document

Other files and links

Cite this