Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material

C. E. Stutz; B. Jogai; D. C. Look; J. M. Ballingall; T. J. Rogers

doi:10.1063/1.111471

Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material

C. E. Stutz, B. Jogai, D. C. Look, J. M. Ballingall, T. J. Rogers

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	2703-2705
Number of pages	3
Journal	Applied Physics Letters
Volume	64
Issue number	20
DOIs	https://doi.org/10.1063/1.111471
State	Published - 1994

ASJC Scopus Subject Areas

Physics and Astronomy (miscellaneous)

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title = "Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material",

author = "Stutz, \{C. E.\} and B. Jogai and Look, \{D. C.\} and Ballingall, \{J. M.\} and Rogers, \{T. J.\}",

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volume = "64",

pages = "2703--2705",

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AU - Stutz, C. E.

AU - Jogai, B.

AU - Look, D. C.

AU - Ballingall, J. M.

AU - Rogers, T. J.

PY - 1994

Y1 - 1994

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EP - 2705

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

ER -

Electrochemical capacitance-voltage analysis of delta-doped pseudomorphic high electron mobility transistor material

ASJC Scopus Subject Areas

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