Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

Z. Q. Fang; D. C. Look; C. Lu; H. Morkoç

doi:10.1007/s11664-004-0274-8

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

Z. Q. Fang, D. C. Look, C. Lu, H. Morkoç

Future of Semiconductors, a National Science Foundation Program

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	L19-L23
Journal	Journal of Electronic Materials
Volume	29
Issue number	9
DOIs	https://doi.org/10.1007/s11664-004-0274-8
State	Published - Sep 2000

ASJC Scopus Subject Areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-004-0274-8

Cite this

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title = "Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy",

author = "Fang, {Z. Q.} and Look, {D. C.} and C. Lu and H. Morko{\c c}",

year = "2000",

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language = "English",

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journal = "Journal of Electronic Materials",

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T1 - Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

AU - Fang, Z. Q.

AU - Look, D. C.

AU - Lu, C.

AU - Morkoç, H.

PY - 2000/9

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SN - 0361-5235

VL - 29

SP - L19-L23

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

Electron and hole traps in GaN p-i-n photodetectors grown by reactive molecular beam epitaxy

ASJC Scopus Subject Areas

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