Electron and hole traps in N-doped ZnO grown on p -type Si by metalorganic chemical vapor deposition

Z. Q. Fang, B. Claflin, D. C. Look, Lei L. Kerr, Xiaonan Li

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@article{d12cee1e091c4b00be83f57db354146c,

title = "Electron and hole traps in N-doped ZnO grown on p -type Si by metalorganic chemical vapor deposition",

author = "Fang, \{Z. Q.\} and B. Claflin and Look, \{D. C.\} and Kerr, \{Lei L.\} and Xiaonan Li",

year = "2007",

doi = "10.1063/1.2759181",

language = "English",

volume = "102",

journal = "Journal of Applied Physics",

issn = "0021-8979",

number = "2",

}

TY - JOUR

T1 - Electron and hole traps in N-doped ZnO grown on p -type Si by metalorganic chemical vapor deposition

AU - Fang, Z. Q.

AU - Claflin, B.

AU - Look, D. C.

AU - Kerr, Lei L.

AU - Li, Xiaonan

PY - 2007

Y1 - 2007

UR - https://www.scopus.com/pages/publications/34547603682

UR - https://www.scopus.com/inward/citedby.url?scp=34547603682&partnerID=8YFLogxK

U2 - 10.1063/1.2759181

DO - 10.1063/1.2759181

M3 - Article

AN - SCOPUS:34547603682

SN - 0021-8979

VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 2

M1 - 023714

ER -